Magnetotransport in thin epitaxial Bi2Se3 films
- Авторлар: Oveshnikov L.N.1,2, Prudkoglyad V.A.2, Nekhaeva E.I.1,2, Kuntsevich A.Y.1,3, Selivanov Y.G.2, Chizhevskii E.G.2, Aronzon B.A.1,2
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Мекемелер:
- National Research Center Kurchatov Institute
- Lebedev Physical Institute
- National Research University Higher School of Economics
- Шығарылым: Том 104, № 9 (2016)
- Беттер: 629-634
- Бөлім: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159880
- DOI: https://doi.org/10.1134/S0021364016210128
- ID: 159880
Дәйексөз келтіру
Аннотация
The magnetoconductivity of thin Bi2Se3 films covered by a protective Se layer and grown at (111) BaF2 substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocalization, as well as the Shubnikov−de Haas oscillations at higher fields, is determined only by the magnetic field component perpendicular to the film plane. The obtained experimental results can be reasonably interpreted under the assumption that the studied films exhibit two-dimensional topologically protected electron states. Moreover, the contribution of these states to the total conductivity turns out to be the dominant one.
Авторлар туралы
L. Oveshnikov
National Research Center Kurchatov Institute; Lebedev Physical Institute
Хат алмасуға жауапты Автор.
Email: Oveshln@gmail.com
Ресей, Moscow, 123182; Moscow, 119991
V. Prudkoglyad
Lebedev Physical Institute
Email: Oveshln@gmail.com
Ресей, Moscow, 119991
E. Nekhaeva
National Research Center Kurchatov Institute; Lebedev Physical Institute
Email: Oveshln@gmail.com
Ресей, Moscow, 123182; Moscow, 119991
A. Kuntsevich
National Research Center Kurchatov Institute; National Research University Higher School of Economics
Email: Oveshln@gmail.com
Ресей, Moscow, 123182; Moscow, 109028
Yu. Selivanov
Lebedev Physical Institute
Email: Oveshln@gmail.com
Ресей, Moscow, 119991
E. Chizhevskii
Lebedev Physical Institute
Email: Oveshln@gmail.com
Ресей, Moscow, 119991
B. Aronzon
National Research Center Kurchatov Institute; Lebedev Physical Institute
Email: Oveshln@gmail.com
Ресей, Moscow, 123182; Moscow, 119991
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