Magnetotransport in thin epitaxial Bi2Se3 films
- 作者: Oveshnikov L.N.1,2, Prudkoglyad V.A.2, Nekhaeva E.I.1,2, Kuntsevich A.Y.1,3, Selivanov Y.G.2, Chizhevskii E.G.2, Aronzon B.A.1,2
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隶属关系:
- National Research Center Kurchatov Institute
- Lebedev Physical Institute
- National Research University Higher School of Economics
- 期: 卷 104, 编号 9 (2016)
- 页面: 629-634
- 栏目: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159880
- DOI: https://doi.org/10.1134/S0021364016210128
- ID: 159880
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详细
The magnetoconductivity of thin Bi2Se3 films covered by a protective Se layer and grown at (111) BaF2 substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocalization, as well as the Shubnikov−de Haas oscillations at higher fields, is determined only by the magnetic field component perpendicular to the film plane. The obtained experimental results can be reasonably interpreted under the assumption that the studied films exhibit two-dimensional topologically protected electron states. Moreover, the contribution of these states to the total conductivity turns out to be the dominant one.
作者简介
L. Oveshnikov
National Research Center Kurchatov Institute; Lebedev Physical Institute
编辑信件的主要联系方式.
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119991
V. Prudkoglyad
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
E. Nekhaeva
National Research Center Kurchatov Institute; Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119991
A. Kuntsevich
National Research Center Kurchatov Institute; National Research University Higher School of Economics
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 109028
Yu. Selivanov
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
E. Chizhevskii
Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 119991
B. Aronzon
National Research Center Kurchatov Institute; Lebedev Physical Institute
Email: Oveshln@gmail.com
俄罗斯联邦, Moscow, 123182; Moscow, 119991
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