Mobility of Dirac electrons in HgTe quantum wells
- Autores: Dobretsova A.A.1,2, Kvon Z.D.1,2, Braginskii L.S.1,2, Entin M.V.1,2, Mikhailov N.N.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Edição: Volume 104, Nº 6 (2016)
- Páginas: 388-391
- Seção: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159753
- DOI: https://doi.org/10.1134/S0021364016180089
- ID: 159753
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Resumo
The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.
Sobre autores
A. Dobretsova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: DobretsovaAA@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
L. Braginskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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