Mobility of Dirac electrons in HgTe quantum wells
- 作者: Dobretsova A.A.1,2, Kvon Z.D.1,2, Braginskii L.S.1,2, Entin M.V.1,2, Mikhailov N.N.1,2
-
隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 104, 编号 6 (2016)
- 页面: 388-391
- 栏目: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159753
- DOI: https://doi.org/10.1134/S0021364016180089
- ID: 159753
如何引用文章
详细
The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.
作者简介
A. Dobretsova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
L. Braginskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
补充文件
