Mobility of Dirac electrons in HgTe quantum wells


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The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.

作者简介

A. Dobretsova

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

Z. Kvon

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

L. Braginskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

M. Entin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: DobretsovaAA@gmail.com
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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