Edge excitons in a 2D topological insulator in a magnetic field
- Авторы: Entin M.V.1,2, Magarill L.I.1,2, Mahmoodian M.M.1,2
-
Учреждения:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Выпуск: Том 103, № 5 (2016)
- Страницы: 328-333
- Раздел: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159121
- DOI: https://doi.org/10.1134/S0021364016050039
- ID: 159121
Цитировать
Аннотация
Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.
Ключевые слова
Об авторах
M. Entin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: entin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
M. Mahmoodian
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
Дополнительные файлы
