Edge excitons in a 2D topological insulator in a magnetic field
- Авторлар: Entin M.V.1,2, Magarill L.I.1,2, Mahmoodian M.M.1,2
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 103, № 5 (2016)
- Беттер: 328-333
- Бөлім: Condensed Matter
- URL: https://ogarev-online.ru/0021-3640/article/view/159121
- DOI: https://doi.org/10.1134/S0021364016050039
- ID: 159121
Дәйексөз келтіру
Аннотация
Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.
Негізгі сөздер
Авторлар туралы
M. Entin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
L. Magarill
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
M. Mahmoodian
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: entin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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