Email this article Modeling of radiation sensitivity of hydrogen sensors based on MISFET
- Authors: Podlepetsky B.I.1
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Affiliations:
- National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
- Issue: Vol 77, No 7 (2016)
- Pages: 1301-1315
- Section: Sensors and Systems
- URL: https://ogarev-online.ru/0005-1179/article/view/150398
- DOI: https://doi.org/10.1134/S0005117916070171
- ID: 150398
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Abstract
The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.
About the authors
B. I. Podlepetsky
National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute)
Author for correspondence.
Email: bipod45@gmail.com
Russian Federation, Moscow
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