Analysis of Mathematical Models of Memristors for Use in Logical Nanoelectronic Memory Circuits of Artificial Intelligence Systems

In the article, memristor devices capable of changing their conductivity depending on the degree of their participation in the signal transmission process are considered as the basis of micro- and nanoelectronic devices. At its core, a memristor is a resistor endowed with a memory function, whose volt-ampere characteristic is nonlinear. His work is based on the dependence of resistance on the integral of the charge flowing through the device, acting as a state variable. These unique properties open the way to the design of fundamentally new electronic systems characterized by exceptional energy efficiency and high performance. Moreover, they serve as the basis for creating self-learning machines capable of adapting to dynamic changes in the external environment. The scope of practical application of memristors is extensive: non-volatile memory for storing information, including binary and multilevel cells; active switching elements in logic integrated circuits; plastic synapses that emulate the work of neurons in neuromorphic artificial intelligence systems built on a nanoelectronic element base.