Email this article Peculiarities of Crystal Growth of Linear Oligophenyls from Vapor
- Authors: Kulishov A.A.1, Postnikov V.A.1
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Affiliations:
- Shubnikov Institute of Crystallography, KCC&Ph, NRC Kurchatov Institute
- Issue: Vol 123, No 3-4 (2024): THEMED SECTION: STRUCTURAL DIAGNOSTICS OF MATERIALS
- Pages: 26-37
- Section: THEMED SECTION: FUNDAMENTAL SCIENTIFIC RESEARCH IN THE FIELD OF NATURAL SCIENCES
- URL: https://ogarev-online.ru/1605-8070/article/view/303499
- DOI: https://doi.org/10.22204/2410-4639-2024-123-124-03-04-26-37
- ID: 303499
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Abstract
The peculiarities of formation and growth of crystals of linear oligophenyls (from diphenyl to p-sexiphenyl) under conditions of physical vapor transport have been investigated. Two structural variants of horizontal growth furnaces were used to study the crystal growth processes: single-zone with a gradient temperature field (classic type) and with two temperature zones. Optimal conditions for growing crystals on a scale of 0.1 to 1 cm were determined for the studied compounds. It was found that under conditions of a two-zone temperature field, at certain temperature difference values between the hot and cold zones, it is possible to obtain larger crystals of better morphological quality compared to growth under conditions of a single-zone gradient thermal field. The crystal structure of the grown single crystalline films was investigated using X-ray diffraction methods.
About the authors
Artem A. Kulishov
Shubnikov Institute of Crystallography, KCC&Ph, NRC Kurchatov Institute
Author for correspondence.
Email: adakyla1255@gmail.com
Russian Federation, 17a Butlerov Str., Moscow, 117342, Russia
Valery A. Postnikov
Shubnikov Institute of Crystallography, KCC&Ph, NRC Kurchatov Institute
Email: postva@yandex.ru
Russian Federation, 17a Butlerov Str., Moscow, 117342, Russia
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