2D Quantum Photosensory

The structure and main parameters of photosensor structures based on quasi-two-dimensional layers of elements of groups IV, V, VI and VIII of D.I. Mendeleev, such as reduced graphene oxide (rGO), tin telluride (SnTe), bismuth telluride (Bi2Te3), platinum selenide (PtSe2), material based on nitrogen-substituted graphene (C3N) are described. New photosensitive elements based on arrays of arbitrarily oriented 2D-Bi2Te3 and reduced graphene oxide (rGO) nanolayers, heterostructures from composite two-dimensional SnTe/rGO nanoparticles, rGO/(SnTe+rGO) and rGO/Bi2Te3 heterostructures have been synthesized for the first time. On the synthesized elements, photosensitivity is implemented in various areas of electromagnetic radiation. Based on the rGO and 2D-Bi2Te3, a field-effect phototransistors were fabricated, in which the effect of the dependence of the shape of the Ids(Vg) curves on illumination by various radiation sources was discovered for the first time, which opens up prospects for creating photosensors with voltage-controlled spectral sensitivity.