Ultraviolet Laser Patterning of Fluorine-Doped Tin Oxide with Different Radiation Directions
- Авторлар: Yang H.1,2, Cao Y.1, Xue W.1, Liu W.1
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Мекемелер:
- College of Mechanical & Electrical Engineering, Wenzhou University
- Sino-German College of Intelligent Manufacturing, Shenzhen Technology University
- Шығарылым: Том 40, № 6 (2019)
- Беттер: 581-589
- Бөлім: Article
- URL: https://ogarev-online.ru/1071-2836/article/view/248859
- DOI: https://doi.org/10.1007/s10946-019-09840-1
- ID: 248859
Дәйексөз келтіру
Аннотация
Selective laser patterning of thin films in a multilayered structure is an emerging technology for fabricating optoelectronics and microelectronics devices. As the application of ultraviolet (UV) lasers is more and more popular in electronics manufacturing, in this study, we compare UV laser patterning of fluorine-doped tin oxide (FTO) films from the front and back sides. We summarize a formula for calculating the focus offset in back-side ablation (BSA) and analyze systematically the relationships between the laser ablation crater size, the damage on glass substrate, and the laser ablation parameters. In addition, the laser ablation process and mechanisms of the BSA and the front-side ablation (FSA) are also elaborated in this paper.
Негізгі сөздер
Авторлар туралы
Huan Yang
College of Mechanical & Electrical Engineering, Wenzhou University; Sino-German College of Intelligent Manufacturing, Shenzhen Technology University
Email: sophialww@163.com
ҚХР, Wenzhou, 325035; Shenzhen, 518118
Yu Cao
College of Mechanical & Electrical Engineering, Wenzhou University
Email: sophialww@163.com
ҚХР, Wenzhou, 325035
Wei Xue
College of Mechanical & Electrical Engineering, Wenzhou University
Email: sophialww@163.com
ҚХР, Wenzhou, 325035
Wenwen Liu
College of Mechanical & Electrical Engineering, Wenzhou University
Хат алмасуға жауапты Автор.
Email: sophialww@163.com
ҚХР, Wenzhou, 325035
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