Improved Thermal Performance of 640 nm Laser Diode Packaged by SiC Submount

Аннотация

We design high-power AlGaInP laser diodes emitting at ~640 nm. AlN and SiC submounts are used as heat sinks for the laser chips. The laser diode with SiC submount showed a higher thermal rollover power of 3.9 W and higher maximum conversion efficiency of 39% at 25°C. In the range of 15 – 35°C, the two types of lasers have similar characteristic temperature T₀. At higher temperatures beyond 40°C, the laser chip mounted on SiC revealed an improved T₀, compared to that on AlN. By measuring the wavelength drift of the two types of lasers, we estimate the thermal resistance to be 9.1 K/W for the laser diode on AlN and 5.6 K/W for the laser diode on SiC.