Enviar artigo por via de e-mail Passively Q-Switched Mode-Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror†
- Autores: Tian Z.1,2, Wang B.1, Gao C.1, Wu Q.2, Xu X.3, Xu J.4, Zhang B.1
-
Afiliações:
- School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
- Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University
- School of Physics Science and Engineering, Institute for Advanced Study, Tongji University
- Edição: Volume 40, Nº 1 (2019)
- Páginas: 94-99
- Seção: Article
- URL: https://ogarev-online.ru/1071-2836/article/view/248663
- DOI: https://doi.org/10.1007/s10946-019-09775-7
- ID: 248663
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
A diode-end-pumped continuous-wave and passively Q-switched mode-locked Nd:(Gd0.3Y0.7)2SiO5 laser was designed. At a pump power of 0.8W, we achieve dual-wavelength continuous-wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM), we obtain passively Q-switched mode-locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4%. The duration of the mode-locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.
Sobre autores
Zhen Tian
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University; State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
Email: bingyuanzhang@yahoo.com
República Popular da China, Liaocheng, 252059; Beijing
Beibei Wang
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Email: bingyuanzhang@yahoo.com
República Popular da China, Liaocheng, 252059
Congcong Gao
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Email: bingyuanzhang@yahoo.com
República Popular da China, Liaocheng, 252059
Qiang Wu
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
Email: bingyuanzhang@yahoo.com
República Popular da China, Beijing
Xiaodong Xu
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University
Email: bingyuanzhang@yahoo.com
República Popular da China, Xuzhou, 221116
Jun Xu
School of Physics Science and Engineering, Institute for Advanced Study, Tongji University
Email: bingyuanzhang@yahoo.com
República Popular da China, Shanghai, 200092
Bingyuan Zhang
School of Physics Science and Information Engineering, Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng University
Autor responsável pela correspondência
Email: bingyuanzhang@yahoo.com
República Popular da China, Liaocheng, 252059
Arquivos suplementares
