Efficient High-Power Ho:YAG Laser Pumped by Dual-End-Diode-Pumped Tm:YLF Laser
- Autores: Yue L.1, Xinyu C.1, Fang B.1, Jingliang L.1, Zhulong H.1, Chunting W.1, Guangyong J.1
-
Afiliações:
- Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
- Edição: Volume 37, Nº 4 (2016)
- Páginas: 389-394
- Seção: Article
- URL: https://ogarev-online.ru/1071-2836/article/view/247931
- DOI: https://doi.org/10.1007/s10946-016-9586-4
- ID: 247931
Citar
Resumo
We report a Ho:YAG (Ho-doped yttrium aluminum garnet) laser pumped by a dual-end-diode-pumped Tm:YLF (Tm-doped yttrium lithium fluoride) laser to obtain an efficient experimental device with high output-power characteristics. We study the influence of the specific values of the output coupling mirror transmittance, the resonant cavity length, and the radius of curvature of the output coupling mirror on the Ho:YAG laser output characteristics. Under optimum experimental conditions, under which the output coupling mirror transmittance was 30%, the resonant cavity length was 25 mm and the output coupling mirror radius of curvature was 300 mm, and the maximum pumping power of the dual-end-diode-pumped Tm:YLF laser was 15.2 W. We obtain an efficient high-power 2.122-μm laser output of 7.98 W from the Ho:YAG laser. The optical-to-optical conversion efficiency is 52.5%, and the beam quality factor figures are Mx2 = 2.89 and My2 = 2.97.
Palavras-chave
Sobre autores
Li Yue
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Chen Xinyu
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Bai Fang
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Liu Jingliang
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Huang Zhulong
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Wu Chunting
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Jin Guangyong
Jilin Key Laboratory of Solid Laser Technology and Application School of Science, Changchun University of Science and Technology
Autor responsável pela correspondência
Email: jgycust@163.com
República Popular da China, Changchun, 130022
Arquivos suplementares
