Spectrum Improvement of a High-Power Broad-Area Laser Diode Based on a Grating Semi-Feedback External Cavity Scheme


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Аннотация

We propose a grating semi-feedback external cavity (GSFEC) scheme for high-power broad-area laser diodes for improving the spectrum characteristics of high-power semiconductor lasers. We design this scheme as two crossed cylindrical resonators employing a holographic diffraction grating and a rectangular highly reflecting mirror. In our experiments, we obtain stable spectrum characteristics over a tuning range of 5 nm, with maximum output power up to 764 mW at an operating current of 3.5 A. The wavelength drift rate with injection current decreases from 0.59 nm/A of free-running condition to 0.2 nm/A, and the laser bandwidth is compressed to 21.5% at 2 A.

Авторлар туралы

Yu-Lei Wang

National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology

Хат алмасуға жауапты Автор.
Email: wyl@hit.edu.cn
ҚХР, Harbin, 150080

Hong-Li Wang

National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology

Email: wyl@hit.edu.cn
ҚХР, Harbin, 150080

Yi Chen

National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology

Email: wyl@hit.edu.cn
ҚХР, Harbin, 150080

Wei-Ming He

National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology

Email: wyl@hit.edu.cn
ҚХР, Harbin, 150080

Rui-Qing Fan

Department of Chemistry, Harbin Institute of Technology

Email: wyl@hit.edu.cn
ҚХР, Harbin, 150001

Zhi-Wei Lv

National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology

Email: wyl@hit.edu.cn
ҚХР, Harbin, 150080

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