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Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
Kokhanenko A.P., Lozovoy K.A., Voitsekhovskii A.V.
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
Dzyadukh S.M., Voitsekhovskii A.V., Nesmelov S.N., Sidorov G.Y., Varavin V.S., Vasil’ev V.V., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V.
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Grigor’ev D.V., Lyapunov D.V.
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