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Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy
Esin M.Y., Hervieu Y.Y., Timofeev V.A., Nikiforov A.I.
Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures
Douhan R.M., Kokhanenko A.P., Lozovoy K.A.
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
Yesin M.Y., Nikiforov A.I., Timofeev V.A., Mashanov V.I., Tuktamyshev A.R., Loshkarev I.D., Pchelyakov O.P.
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Varavin V.S., Vasil’ev V.V., Dvoretskii S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y., Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
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