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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Varavin V.S., Vasil’ev V.V., Dvoretskii S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y., Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide
Zarubin A.N., Kolesnikova I.I., Lozinskaya A.D., Novikov V.A., Skakunov M.S., Tolbanov O.P., Tyazhev A.V., Shemeryankina A.V.
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