On the Influence of Electron Energy on Characteristics of the Cherenkov Radiation and Cathodoluminescence
- Authors: Tarasenko V.F.1, Baksht E.K.1, Beloplotov D.V.1, Burachenko A.G.1, Erofeev M.V.1, Lipatov E.I.1, Lomaev M.I.1, Oleshko V.I.1
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Affiliations:
- Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
- Issue: Vol 62, No 7 (2019)
- Pages: 1181-1190
- Section: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/242058
- DOI: https://doi.org/10.1007/s11182-019-01833-6
- ID: 242058
Cite item
Abstract
A review of the results of investigations of the Cherenkov radiation (CR) and pulsed cathodoluminescence during irradiation of different crystals and polymethylmethacrylate (PMMA) with subnanosecond and nanosecond beams is made. The calculations demonstrating the influence of the electron energy and refractive index of a material on the CR intensity and spectrum, as well as its spatial characteristics are performed. The experimental data on the CR observation at the electron energy E up to 400 keV are presented. It is shown that an increase in E allows detecting the CR in diamond, leucosapphire, and quartz KU-1 crystals using a standard spectrometer. It is found out that is more difficult to register the CR in PMMA because of the radiation absorption in the region of wavelengths shorter than 300–350 nm and an internal breakdown of the specimens due to the accumulation of electrons in them at high beam current densities or (and) pulse durations, even with a monochromator and a PMT. Some recommendations are given for designing detectors of runaway electrons in tokomak-type facilities.
About the authors
V. F. Tarasenko
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Author for correspondence.
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
E. Kh. Baksht
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
D. V. Beloplotov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
A. G. Burachenko
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
M. V. Erofeev
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
E. I. Lipatov
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
M. I. Lomaev
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
V. I. Oleshko
Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences
Email: VFT@loi.hcei.tsc.ru
Russian Federation, Tomsk
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