Schottky Diodes on Heterostructures with Two-Dimensional Electron Gas
- Authors: Yushchenko A.Y.1, Ayzenshtat G.I.1, Fedotova F.I.1
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Affiliations:
- JSC “Research Institute of Semiconductor Devices”
- Issue: Vol 61, No 12 (2019)
- Pages: 2159-2166
- Section: Physics of Semiconductors and Dielectrics
- URL: https://ogarev-online.ru/1064-8887/article/view/241312
- DOI: https://doi.org/10.1007/s11182-019-01652-9
- ID: 241312
Cite item
Abstract
The results of studies of the characteristics of contacts with Schottky barriers on a pseudomorphic AlGaAs/InGaAs heterostructure are presented. The Ti-based Schottky diodes were created by a standard pHEMT technology. It is shown that the parameters of the fabricated contacts with Schottky barriers are close to the characteristics of ideal contacts based on aluminum or molybdenum created in the process of molecular beam epitaxy. It is also shown that as compared to the diodes based on AlGaAs homostructures, the measured Schottky barrier height is smaller and the ideality factor is higher in diodes created on pseudomorphic heterostructures. Along with the well-known methods for determining the Schottky-barrier height, we tested a technique based on the measurement of the threshold voltage in diodes with a two-dimensional electron gas.
About the authors
A. Yu. Yushchenko
JSC “Research Institute of Semiconductor Devices”
Author for correspondence.
Email: yay@niipp.ru
Russian Federation, Tomsk
G. I. Ayzenshtat
JSC “Research Institute of Semiconductor Devices”
Email: yay@niipp.ru
Russian Federation, Tomsk
F. I. Fedotova
JSC “Research Institute of Semiconductor Devices”
Email: yay@niipp.ru
Russian Federation, Tomsk
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