Email this article Mechanisms of Current Flow in the Diode Structure with an n+–p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film
- Authors: Tregulov V.V.1, Litvinov V.G.2, Ermachikhin A.V.2
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Affiliations:
- Ryazan State University named for S. Yesenin
- Ryazan State Radio Engineering University
- Issue: Vol 60, No 9 (2018)
- Pages: 1565-1571
- Section: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/239364
- DOI: https://doi.org/10.1007/s11182-018-1252-6
- ID: 239364
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Abstract
Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n+–p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.
About the authors
V. V. Tregulov
Ryazan State University named for S. Yesenin
Author for correspondence.
Email: trww@yandex.ru
Russian Federation, Ryazan
V. G. Litvinov
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan
A. V. Ermachikhin
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan
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