Reflection Electron Energy Loss Spectroscopy of Iron Monosilicide
- Autores: Parshin A.S.1, Igumenov A.Y.1, Mikhlin Y.L.2, Pchelyakov O.P.1,3, Zhigalov V.S.1,4
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Afiliações:
- M. F. Reshetnev Siberian State Aerospace University
- Institute of Chemistry and Chemical Technology of the Siberian Branch of the Russian Academy of Sciences
- A. V. Rzhanov Institute of Semiconductor Physics of the Russian Academy of Sciences
- L. V. Kirensky Institute of Physics of the Russian Academy of Sciences
- Edição: Volume 59, Nº 10 (2017)
- Páginas: 1610-1615
- Seção: Article
- URL: https://ogarev-online.ru/1064-8887/article/view/238906
- DOI: https://doi.org/10.1007/s11182-017-0952-7
- ID: 238906
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Resumo
X-ray photoelectron spectra, reflection electron energy loss spectra, and inelastic electron scattering cross section spectra of iron monosilicide FeSi are investigated. It is shown that the spectra of inelastic electron scattering cross section have advantages over the reflection electron energy loss spectra in studying the processes of electron energy losses. An analysis of the fine structure of the inelastic electron scattering cross section spectra allows previously unresolved peaks to be identified and their energy, intensity, and nature to be determined. The difference between energies of fitting loss peaks in the spectra of inelastic electron scattering cross section of FeSi and pure Fe are more substantial than the chemical shifts in X-ray photoelectron spectra, which indicates the possibility of application of the fine structure of the spectra of inelastic electron scattering cross section for elemental analysis.
Sobre autores
A. Parshin
M. F. Reshetnev Siberian State Aerospace University
Autor responsável pela correspondência
Email: aparshin@sibsau.ru
Rússia, Krasnoyarsk
A. Igumenov
M. F. Reshetnev Siberian State Aerospace University
Email: aparshin@sibsau.ru
Rússia, Krasnoyarsk
Yu. Mikhlin
Institute of Chemistry and Chemical Technology of the Siberian Branch of the Russian Academy of Sciences
Email: aparshin@sibsau.ru
Rússia, Krasnoyarsk
O. Pchelyakov
M. F. Reshetnev Siberian State Aerospace University; A. V. Rzhanov Institute of Semiconductor Physics of the Russian Academy of Sciences
Email: aparshin@sibsau.ru
Rússia, Krasnoyarsk; Novosibirsk
V. Zhigalov
M. F. Reshetnev Siberian State Aerospace University; L. V. Kirensky Institute of Physics of the Russian Academy of Sciences
Email: aparshin@sibsau.ru
Rússia, Krasnoyarsk; Krasnoyarsk
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