Analysis of Multilayer Heteroepitaxial Structures Based on CdHgTe Using Infrared Transmission Spectra

Abstract

In this paper, we studied the transmission spectra of multilayer heteroepitaxial structures based on ternary cadmium-mercury-tellurium (CMT) solid solutions. A model for calculating the characteristics of epitaxial layers that compose a complex multilayer heteroepitaxial structure via experimental transmission spectrum was implemented. A packet gradient descent method is realized to calculate the parameters of the layers. We calculated the parameters of heteroepitaxial structures grown via liquid phase and molecular beam epitaxy: a thickness of operating photosensitive layers with an error of no more than 0.1 μm and a CMT composition with an error of no more than 1% were determined. The developed models show the efficacy in express control of the optical characteristics of semiconductor structures.