Email this article To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
- Authors: Kholodnov V.A.1,2,3, Burlakov I.D.1,4
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Affiliations:
- Orion Research and Production Association
- Kotel’nikov Institute of Radio Engineering and Electronics
- Moscow Institute of Physics and Technology
- Moscow Technological University (MIREA)
- Issue: Vol 63, No 9 (2018)
- Pages: 1127-1131
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://ogarev-online.ru/1064-2269/article/view/200217
- DOI: https://doi.org/10.1134/S1064226918090103
- ID: 200217
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Abstract
A double heterostructure based on direct-gap semiconductors with a photoabsorption middle layer at the avalanche breakdown voltage is considered. Such structures are used in the development of avalanche photodiodes with separate absorption and multiplication regions (APD with SAMR). It is shown that impact generation of electron–hole pairs should be considered in calculating the maximum possible characteristics of APDs with SAMR even in the absorption layer; therewith, this can be performed analytically.
About the authors
V. A. Kholodnov
Orion Research and Production Association; Kotel’nikov Institute of Radio Engineering and Electronics; Moscow Institute of Physics and Technology
Author for correspondence.
Email: vkholodnov@mail.ru
Russian Federation, Moscow, 111538; Moscow, 125009; Dolgoprudnyi, Moscow oblast, 141700
I. D. Burlakov
Orion Research and Production Association; Moscow Technological University (MIREA)
Email: vkholodnov@mail.ru
Russian Federation, Moscow, 111538; Moscow, 119454
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