Semiconductor–Metal Phase Transition and “Tristable” Electrical Switching in Nanocrystalline Vanadium Oxide Films on Silicon
- Авторы: Tutov E.A.1, Goloshchapov D.L.2, Zlomanov V.P.3
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Учреждения:
- Voronezh State Technical University
- Voronezh State University
- Moscow State University
- Выпуск: Том 45, № 6 (2019)
- Страницы: 584-587
- Раздел: Article
- URL: https://ogarev-online.ru/1063-7850/article/view/208338
- DOI: https://doi.org/10.1134/S1063785019060312
- ID: 208338
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Аннотация
Temperature dependences of the ac conductivity of nanocrystalline mixed vanadium oxide films on silicon revealed a multistep shape of the hysteresis loop observed during the semiconductor–metal phase transition in VO2, which was not manifested in the case of dc measurements. These peculiarities are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. The appearance of steps is explained by the phase transition taking place in separate groups of crystallites with close dimensions. The phenomenon of “tristable” electrical switching in these vanadium oxide films was observed for the first time.
Об авторах
E. Tutov
Voronezh State Technical University
Автор, ответственный за переписку.
Email: tutov_ea@mail.ru
Россия, Voronezh, 394006
D. Goloshchapov
Voronezh State University
Email: tutov_ea@mail.ru
Россия, Voronezh, 394036
V. Zlomanov
Moscow State University
Email: tutov_ea@mail.ru
Россия, Moscow, 119991
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