High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines


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Аннотация

Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.

Авторлар туралы

A. Chizh

SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus

Email: zhur@isp.nsc.ru
Белоруссия, Minsk, 220072

K. Mikitchuk

SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus

Email: zhur@isp.nsc.ru
Белоруссия, Minsk, 220072

K. Zhuravlev

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

D. Dmitriev

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090

A. Toropov

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090

N. Valisheva

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090

M. Aksenov

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Gilinsky

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090

I. Chistokhin

A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences

Email: zhur@isp.nsc.ru
Ресей, Novosibirsk, 630090

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