Enviar artigo por via de e-mail High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
- Autores: Chizh A.L.1, Mikitchuk K.B.1, Zhuravlev K.S.2,3, Dmitriev D.V.2,3, Toropov A.I.2, Valisheva N.A.2, Aksenov M.S.2, Gilinsky A.M.2, Chistokhin I.B.2
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Afiliações:
- SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
- A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Edição: Volume 45, Nº 7 (2019)
- Páginas: 739-741
- Seção: Article
- URL: https://ogarev-online.ru/1063-7850/article/view/208381
- DOI: https://doi.org/10.1134/S1063785019070204
- ID: 208381
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Resumo
Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.
Sobre autores
A. Chizh
SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
Email: zhur@isp.nsc.ru
Belarus, Minsk, 220072
K. Mikitchuk
SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
Email: zhur@isp.nsc.ru
Belarus, Minsk, 220072
K. Zhuravlev
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Autor responsável pela correspondência
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
D. Dmitriev
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Toropov
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090
N. Valisheva
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. Aksenov
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Gilinsky
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Chistokhin
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
Rússia, Novosibirsk, 630090
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