Specific Features of the Luminescence of ZnO:Te/GaN/Al2O3 Heterostructures
- Авторы: Bagamadova A.M.1, Asvarov A.S.1, Omaev A.K.1, Zobov M.E.1
-
Учреждения:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Выпуск: Том 44, № 12 (2018)
- Страницы: 1142-1144
- Раздел: Article
- URL: https://ogarev-online.ru/1063-7850/article/view/208128
- DOI: https://doi.org/10.1134/S1063785018120398
- ID: 208128
Цитировать
Аннотация
High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al2O3 heterostructure have been analyzed.
Об авторах
A. Bagamadova
Amirkhanov Institute of Physics, Dagestan Scientific Center
Автор, ответственный за переписку.
Email: m_asyabag@mail.ru
Россия, Makhachkala, 367003
A. Asvarov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: m_asyabag@mail.ru
Россия, Makhachkala, 367003
A. Omaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: m_asyabag@mail.ru
Россия, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center
Email: m_asyabag@mail.ru
Россия, Makhachkala, 367003
Дополнительные файлы
