Production technology and optical absorption characteristics of CuIn0.95Ga0.05Se2 semiconductor solid solution films


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Abstract

A production technology of thin CuIn0.95Ga0.05Se2 films has been developed based on the method of two-stage selenization of CuIn0.95Ga0.05 precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of obtained films were studied by electron microscopy and X-ray diffraction techniques. The spectral dependence of the optical absorption coefficient was measured.

About the authors

M. A. Aliev

Amirkhanov Institute of Physics, Dagestan Scientific Center

Author for correspondence.
Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367003

S. N. Kallaev

Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367003

T. M. Gadzhiev

Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367003

R. M. Gadzhieva

Amirkhanov Institute of Physics, Dagestan Scientific Center

Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367003

A. M. Ismailov

Dagestan State University

Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367000

B. A. Bilalov

Dagestan State Technical University

Email: aliev_marat@mail.ru
Russian Federation, Makhachkala, Dagestan, 367015

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