A random telegraph signal in tunneling silicon p–n junctions with GeSi nanoislands

Аннотация

We have experimentally discovered random telegraph signal generation in tunneling silicon p⁺–n⁺ junctions with embedded self-assembled GeSi nanoislands. The observed phenomenon is related to blocking of the electron tunneling via individual GeSi nanoislands due to the generation of holes in, and their thermal emission from, the nanoislands.