Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings

G. G. Sominskii; T. A. Tumareva; E. P. Taradaev; A. A. Rukavitsyna; M. E. Givargizov; A. N. Stepanova

doi:10.1134/S106378421902021X

Annular Multi-Tip Field Emitters with Metal–Fullerene Protective Coatings

作者: Sominskii G.G.¹, Tumareva T.A.¹, Taradaev E.P.¹, Rukavitsyna A.A.¹, Givargizov M.E.², Stepanova A.N.²
隶属关系:
1. Peter-the-Great Polytechnic University
2. Shubnikov Institute of Crystallography, Russian Academy of Sciences
期: 卷 64, 编号 2 (2019)
页面: 270-273
栏目: Physical Electronics
URL: https://ogarev-online.ru/1063-7842/article/view/202939
DOI: https://doi.org/10.1134/S106378421902021X
ID: 202939

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

A technology of creation of annular silicon field emitters with bilayer metal–fullerene coating has been developed and their performance has been studied. It has been shown that annular emitters with a surface area of about 0.3 cm² provide a current up to 100–110 mA and stably operate under conditions of technical vacuum (~10^–7 Torr).