Influence of Annealing and Argon Pressure on the Microcrystalline Structure of Magnetron-Sputtered Textured Cobalt Films
- Authors: Dzhumaliev A.S.1,2, Nikulin Y.V.1,2, Filimonov Y.A.1,2,3
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
- Chernyshevsky National State Research University
- Gagarin State Technical University
- Issue: Vol 63, No 11 (2018)
- Pages: 1678-1686
- Section: Physical Electronics
- URL: https://ogarev-online.ru/1063-7842/article/view/202356
- DOI: https://doi.org/10.1134/S1063784218110099
- ID: 202356
Cite item
Abstract
The influence of argon pressure P (0.13 ≤ P ≤ 1 Pa) and vacuum annealing on the microstructure and texture of d ≈ 300 nm thick cobalt films magnetron-sputtered on a SiO2/Si substrate has been investigated. It has been shown that the films deposited at 0.26 ≤ P < 1 Pa have a columnar microstructure with a mixed hcp-Co(002)/fcc-Co(111) phase. Annealing results in a more uniform microstructure owing to the grain size growth and improves the hcp-Co(002)/fcc-Co(111) texture. The films deposited at 0.13 ≤ P < 0.18 Pa have a mixed crystalline phase: the hcp-Co(002)/fcc-Co(111) and hcp-Co(101) phases coexist with an fcc crystalline phase and fcc-Co(200) texture. Finally, films grown at P ≈ 0.13 Pa are characterized by the fcc-Co(200) texture, and their microstructure is nonuniform over the thickness: at the film–substrate interface, there exists a dc ≈ 100–130 nm thick layer with a quasi-uniform microstructure, which becomes granulated at d > dc. Annealing results in a more uniform microstructure of these films due to grain growth, improves the fcc-Co(200) texture, and causes the appearance of the fcc-Co(111)/hcp-Co(002) phase.
About the authors
A. S. Dzhumaliev
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences; Chernyshevsky National State Research University
Email: yvnikulin@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012
Yu. V. Nikulin
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences; Chernyshevsky National State Research University
Author for correspondence.
Email: yvnikulin@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012
Yu. A. Filimonov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences; Chernyshevsky National State Research University; Gagarin State Technical University
Email: yvnikulin@gmail.com
Russian Federation, Saratov, 410019; Saratov, 410012; Saratov, 410054
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