Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films


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Abstract

It has been shown that Ag and Au nanoparticles and thin layers influence charge carrier generation in InGaN/GaN multiple quantum well structures and crystalline ZnO films owing to the surface morphology heterogeneity of the semiconductors. When nanoparticles 10 < d < 20 nm in size are applied on InGaN/GaN multiple quantum well structures with surface morphology less nonuniform than that of ZnO films, the radiation intensity has turned out to grow considerably because of a plasmon resonance with the participation of localized plasmons. The application of Ag or Au layers on the surface of the structures strongly attenuates the radiation. When Ag and Au nanoparticles are applied on crystalline ZnO films obtained by rf magnetron sputtering, the radiation intensity in the short-wavelength part of the spectrum increases insignificantly because of their highly heterogeneous surface morphology.

About the authors

M. M. Mezdrogina

Ioffe Institute

Author for correspondence.
Email: margaret.m@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. Ya. Vinogradov

Ioffe Institute

Email: margaret.m@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

Yu. V. Kozhanova

Peter the Great St. Petersburg Polytechnic University

Email: margaret.m@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 29, St. Petersburg, 195251

V. S. Levitskii

Ioffe Institute; ООО NTI TPT

Email: margaret.m@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021

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