| Шығарылым |
Атауы |
Файл |
| Том 63, № 2 (2018) |
InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths |
(Eng)
|
|
Il’inskaya N., Karandashev S., Lavrov A., Matveev B., Remennyi M., Stus’ N., Usikova A.
|
| Том 63, № 1 (2018) |
Magnetization of Paraffin-Based Magnetic Nanocolloids |
(Eng)
|
|
Dikanskii Y., Ispiryan A., Kunikin S., Radionov A.
|
| Том 62, № 12 (2017) |
The Use of Solar Cells with a Bifacial Contact Grid under the Conditions of Kazakhstan |
(Eng)
|
|
Tokmoldin N., Chuchvaga N., Verbitskii V., Titov A., Zholdybayev K., Terukov E., Tokmoldin S.
|
| Том 62, № 11 (2017) |
Analysis of integrated thyristor switching-off by a reverse gate pulse current |
(Eng)
|
|
Grekhov I., Lyublinsky A., Mikhailov E., Poloskin D., Skidanov A.
|
| Том 62, № 7 (2017) |
Charge transfer and thermopower in TlGdS2 |
(Eng)
|
|
Mustafaeva S., Asadov S.
|
| Том 62, № 7 (2017) |
Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures |
(Eng)
|
|
Lebedev D., Mintairov A., Vlasov A., Davydov V., Kulagina M., Troshkov S., Bogdanov A., Smirnov A., Gocalinska A., Juska G., Pelucchi E., Kapaldo J., Rouvimov S., Merz J.
|
| Том 62, № 6 (2017) |
MBE-grown InSb photodetector arrays |
(Eng)
|
|
Bakarov A., Gutakovskii A., Zhuravlev K., Kovchavtsev A., Toropov A., Burlakov I., Boltar’ K., Vlasov P., Lopukhin A.
|
| Том 62, № 5 (2017) |
Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges |
(Eng)
|
|
Korolyov S., Vostokov N., D’yakonova N., Shashkin V.
|
| Том 62, № 4 (2017) |
Solar radiation concentrators paired with multijunction photoelectric converters in ground-based solar power plants (Part II) |
(Eng)
|
|
Ionova E., Ulanov M., Davidyuk N., Sadchikov N.
|
| Том 62, № 3 (2017) |
Influence of surface processing in a BCl3 plasma on the formation of ohmic contacts to AlGaN/GaN structures |
(Eng)
|
|
Andrianov N., Kobelev A., Smirnov A., Barsukov Y., Zhukov Y.
|
| Том 62, № 3 (2017) |
Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions |
(Eng)
|
|
Shilyaev A., Mynbaev K., Bazhenov N., Greshnov A.
|
| Том 62, № 3 (2017) |
Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – xGex layers in Si–GeH4 molecular beam epitaxy |
(Eng)
|
|
Orlov L., Ivin S., Fomin V.
|
| Том 62, № 3 (2017) |
Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating |
(Eng)
|
|
Kurnosov V., Kurnosov K.
|
| Том 62, № 3 (2017) |
Adaptive photodetector based on nonsteady-state photo-EMF for the detection of elastic deformations and stresses |
(Eng)
|
|
Bryushinin M., Kulikov V., Petrov A., Sokolov I., Balbashov A.
|
| Том 62, № 1 (2017) |
Calculation and optimization of thermoelectric cooling modes of thermally loaded elements |
(Eng)
|
|
Vasil’ev E.
|
| Том 61, № 12 (2016) |
Recombination in converters of β-radiation energy to electrical energy |
(Eng)
|
|
Abanin I., Amelichev V., Bulyarskii S., Lakalin A.
|
| Том 61, № 12 (2016) |
Solar radiation concentrators paired with multijunction photoelectric converters in ground-based solar power plants (part I) |
(Eng)
|
|
Ulanov M., Davidyuk N., Sadchikov N., Ionova E.
|
| Том 61, № 11 (2016) |
Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n+–p-junction and an antireflective porous silicon film |
(Eng)
|
|
Tregulov V., Stepanov V., Litvinov V., Ermachikhin A.
|
| Том 61, № 10 (2016) |
Analysis of reliability of semiconductor emitters with different designs of cavities |
(Eng)
|
|
Ivanov A., Kurnosov V., Kurnosov K., Kurnyavko Y., Lobintsov A., Meshkov A., Penkin V., Romantsevich V., Uspenskii M., Chernov R.
|
| Том 61, № 7 (2016) |
Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells |
(Eng)
|
|
Gorbatsevich A., Danilin A., Korneev V., Magomedbekov E., Molin A.
|
| Том 61, № 5 (2016) |
Beta-electric elements made of amorphous silicon |
(Eng)
|
|
Voronkov E., Anufriev Y., Terukov E.
|
| Том 61, № 3 (2016) |
Powerful diode nanosecond current opening switch made of p-silicon (p-SOS) |
(Eng)
|
|
Grekhov I., Lyublinskii A., Belyakova E.
|
| Том 61, № 2 (2016) |
Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors |
(Eng)
|
|
Solin N., Romashev L., Naumov S., Saranin A., Zotov A., Olyanich D., Kotlyar V., Utas O.
|
| Том 61, № 2 (2016) |
Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation |
(Eng)
|
|
Ivanov P., Grekhov I.
|
| Нәтижелер 49 - 26/49 |
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