Conductivity Inversion in Thin  n -InSe Films under Laser Irradiation

A. G. Kyazym-zade; V. M. Salmanov; A. G. Guseinov; R. M. Mamedov; Z. A. Agamaliev; A. A. Salmanova; F. M. Akhmedova

doi:10.1134/S1063784219040145

Conductivity Inversion in Thin n-InSe Films under Laser Irradiation

Авторы: Kyazym-zade A.G.¹, Salmanov V.M.¹, Guseinov A.G.¹, Mamedov R.M.¹, Agamaliev Z.A.¹, Salmanova A.A.², Akhmedova F.M.¹
Учреждения:
1. Baku State University
2. Azerbaijan State Oil and Industry University
Выпуск: Том 64, № 4 (2019)
Страницы: 555-558
Раздел: Solid State Electronics
URL: https://ogarev-online.ru/1063-7842/article/view/203309
DOI: https://doi.org/10.1134/S1063784219040145
ID: 203309

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Аннотация

Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.