The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF 2  Surface

B. E. Umirzakov; R. Kh. Ashurov; S. B. Donaev

doi:10.1134/S1063784219020269

The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF₂ Surface

Authors: Umirzakov B.E.¹, Ashurov R.K.¹, Donaev S.B.¹
Affiliations:
1. Tashkent State Technical University
Issue: Vol 64, No 2 (2019)
Pages: 232-235
Section: Solid State Electronics
URL: https://ogarev-online.ru/1063-7842/article/view/202905
DOI: https://doi.org/10.1134/S1063784219020269
ID: 202905

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Abstract

The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.

About the authors

B. E. Umirzakov

Tashkent State Technical University

Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095

R. Kh. Ashurov

Tashkent State Technical University

Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095

S. B. Donaev

Tashkent State Technical University

Author for correspondence.
Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095

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The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

Full Text

Abstract

About the authors

B. E. Umirzakov

R. Kh. Ashurov

S. B. Donaev

Supplementary files

The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF₂ Surface