Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiOx

Abstract

The change of the immitance of the metal–insulator–metal memristive structures based on SiO_x, which is observed during electroforming and resistive switching, confirms the formation of conducting channels (filaments) in the insulator during forming and their rupture upon a transition of the structure to a highresistance state. The observed switching of the differential capacitance and conductivity synchronously with the switching of current (resistance) can substantially extend the functional applications of memristive devices of this type.