Metal–insulator phase transition in hydrogenated thin films of V2O3
- 作者: Andreev V.N.1, Klimov V.A.1, Kompan M.E.1
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隶属关系:
- Ioffe Institute
- 期: 卷 59, 编号 12 (2017)
- 页面: 2441-2443
- 栏目: Lattice Dynamics
- URL: https://ogarev-online.ru/1063-7834/article/view/201760
- DOI: https://doi.org/10.1134/S1063783417120046
- ID: 201760
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详细
Temperature dependences of the electrical conductivity of thin vanadium sesquioxide V2O3 films obtained by using the laser sputtering technique have been studied. A significant decrease (by four–five orders of magnitude) in the electrical conductivity has been observed below 150 K as a result of a metal–insulator phase transition. It is shown that hydrogenation of films lowers the temperature of this phase transition.
作者简介
V. Andreev
Ioffe Institute
编辑信件的主要联系方式.
Email: vn.andreev.solid@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Klimov
Ioffe Institute
Email: vn.andreev.solid@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Kompan
Ioffe Institute
Email: vn.andreev.solid@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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