Field Effect in Monolayer Graphene Associated with the Formation of Graphene–Water Interface
- Авторы: Butko A.V.1, Butko V.Y.1,2, Lebedev S.P.3, Lebedev A.A.1, Kumzerov Y.A.1
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Учреждения:
- Ioffe Institute
- St. Petersburg Academic University
- St. Petersburg State University of Information Technologies, Mechanics and Optics
- Выпуск: Том 60, № 12 (2018)
- Страницы: 2668-2671
- Раздел: Graphenes
- URL: https://ogarev-online.ru/1063-7834/article/view/204702
- DOI: https://doi.org/10.1134/S1063783418120107
- ID: 204702
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Аннотация
Establishing the features of interfacial effects on the electrical conductivity of graphene is crucial for successful design of novel graphene-based electronic devices, including chemical sensors and biosensors. We study electrical properties of monolayer graphene, prepared by thermal decomposition of silicon carbide in argon, in the field-effect transistor and the four-probe geometries. Alterations in the electrical properties of graphene in response to placing a quantity of water on its surface followed by removal of the water are investigated. In these geometries, the field effect is shown to play a key role in the way the electrical properties of graphene are affected by the formation of the graphene–water interface.
Об авторах
A. Butko
Ioffe Institute
Email: vladimirybutko@gmail.com
Россия, St. Petersburg
V. Butko
Ioffe Institute; St. Petersburg Academic University
Автор, ответственный за переписку.
Email: vladimirybutko@gmail.com
Россия, St. Petersburg; St. Petersburg
S. Lebedev
St. Petersburg State University of Information Technologies, Mechanics and Optics
Email: vladimirybutko@gmail.com
Россия, St. Petersburg
A. Lebedev
Ioffe Institute
Email: vladimirybutko@gmail.com
Россия, St. Petersburg
Yu. Kumzerov
Ioffe Institute
Email: vladimirybutko@gmail.com
Россия, St. Petersburg
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