Email this article Quantum Size Effect in Superconducting Aluminum Films
- Authors: Arutyunov K.Y.1,2, Sedov E.A.1, Golokolenov I.A.1,2, Zav’yalov V.V.1,2, Konstantinidis G.3, Stavrinidis A.3, Stavrinidis G.3, Vasiliadis I.4, Kekhagias T.4, Dimitrakopulos G.P.4, Komninu F.4, Kroitoru M.D.5,6, Shanenko A.A.6
-
Affiliations:
- National Research University Higher School of Economics
- Kapitza Institute for Physical Problems, Russian Academy of Sciences
- Institute of Electronic Structure and Laser, Foundation for Research and Technology (FORTH)
- Physics Department, Aristotle University of Thessaloniki
- Institute for Theoretical Physics III, University of Bayreuth
- Physics Department, Center for Exact and Natural Sciences, Federal University of Pernambuco
- Issue: Vol 61, No 9 (2019)
- Pages: 1559-1562
- Section: Superconductivity
- URL: https://ogarev-online.ru/1063-7834/article/view/206102
- DOI: https://doi.org/10.1134/S1063783419090038
- ID: 206102
Cite item
Open Access
Access granted
Subscription Access
Abstract
High-quality aluminum films on GaAs substrates are studied experimentally. The critical temperature of superconductivity is found to increase markedly with decreasing the film thickness. The observed phenomenon is considered as a manifestation of the quantum confinement effect, which affects both the density of states and the electron–phonon interaction.
About the authors
K. Yu. Arutyunov
National Research University Higher School of Economics; Kapitza Institute for Physical Problems, Russian Academy of Sciences
Author for correspondence.
Email: karutyunov@hse.ru
Russian Federation, Moscow; Moscow
E. A. Sedov
National Research University Higher School of Economics
Email: karutyunov@hse.ru
Russian Federation, Moscow
I. A. Golokolenov
National Research University Higher School of Economics; Kapitza Institute for Physical Problems, Russian Academy of Sciences
Email: karutyunov@hse.ru
Russian Federation, Moscow; Moscow
V. V. Zav’yalov
National Research University Higher School of Economics; Kapitza Institute for Physical Problems, Russian Academy of Sciences
Email: karutyunov@hse.ru
Russian Federation, Moscow; Moscow
G. Konstantinidis
Institute of Electronic Structure and Laser, Foundation for Research and Technology (FORTH)
Email: karutyunov@hse.ru
Greece, Heraklion
A. Stavrinidis
Institute of Electronic Structure and Laser, Foundation for Research and Technology (FORTH)
Email: karutyunov@hse.ru
Greece, Heraklion
G. Stavrinidis
Institute of Electronic Structure and Laser, Foundation for Research and Technology (FORTH)
Email: karutyunov@hse.ru
Greece, Heraklion
I. Vasiliadis
Physics Department, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Greece, Thessaloniki
T. Kekhagias
Physics Department, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Greece, Thessaloniki
G. P. Dimitrakopulos
Physics Department, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Greece, Thessaloniki
F. Komninu
Physics Department, Aristotle University of Thessaloniki
Email: karutyunov@hse.ru
Greece, Thessaloniki
M. D. Kroitoru
Institute for Theoretical Physics III, University of Bayreuth; Physics Department, Center for Exact and Natural Sciences, Federal University of Pernambuco
Email: karutyunov@hse.ru
Germany, Bayreuth; Pernambuco
A. A. Shanenko
Physics Department, Center for Exact and Natural Sciences, Federal University of Pernambuco
Email: karutyunov@hse.ru
Brazil, Pernambuco
Supplementary files
