Effect of Mechanical Stresses and Annealing on the Magnetic Structure and the Magnetic Impedance of Amorphous CoFeSiBCr Microwires


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Abstract

The structural and magnetic properties of amorphous ferromagnetic microwires can undergo significant measurements under the action of external mechanical stresses and heat treatment. The study of transformations occurring in this case is important for designing various sensors of mechanical stresses, loading, and temperature and also for inducing in the wires a certain type of magnetic anisotropy that plays a significant role in the realization of various effects in them. In this work, the influence of external stresses and annealing on the processes of the magnetization and the magnetic impedance of Co71Fe5B11Si10Cr3 microwires having a low positive magnetostriction (~10-8) in amorphous state has been studied. The influence of external stresses leads to a sharp change in the character of the magnetization reversal curve, which was due to the change in the sign of the magnetostriction and the type of magnetic anisotropy. The amplitude of higher harmonics and the value of the magnetic impedance, respectively, are sensitive to mechanical stresses. Elastic stresses in the wires with a partial crystallization do not lead to a marked change in the magnetic properties; however, annealing can lead to a substantial increase in the axial magnetic anisotropy of the wires existing in the stressed state. The experimental results are analyzed in the framework of a magnetostriction model of induced magnetic anisotropy.

About the authors

M. G. Nematov

National University of Science and Technology MISiS; Tajik Technical University named after ac. M.S. Osimi

Author for correspondence.
Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049; Dushanbe, 734042

M. M. Salem

National University of Science and Technology MISiS

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049

U. Azim

National University of Science and Technology MISiS

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049

M. Akhmat

National University of Science and Technology MISiS

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049

A. T. Morchenko

National University of Science and Technology MISiS

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049

N. A. Yudanov

National University of Science and Technology MISiS

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049

L. V. Panina

National University of Science and Technology MISiS; Institute of Design Problems in Microelectronics

Email: nematovmaqsud@misis.ru
Russian Federation, Leninskii pr. 4, Moscow, 119049; Sovetskaya ul. 3, Moscow, 124365

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