Email this article Energy spectrum of electron trapping centers in CuInAsS3
- Authors: Zobov E.M.1, Mollaev A.Y.1, Saipulaeva L.A.1, Alibekov A.G.1, Melnikova N.V.2
-
Affiliations:
- Amirkhanov Institute of Physics
- Institute of Natural Science
- Issue: Vol 58, No 12 (2016)
- Pages: 2457-2459
- Section: Ferroelectricity
- URL: https://ogarev-online.ru/1063-7834/article/view/199316
- DOI: https://doi.org/10.1134/S1063783416120362
- ID: 199316
Cite item
Open Access
Access granted
Subscription Access
Abstract
This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range EC–(0.14–0.35) eV.
About the authors
E. M. Zobov
Amirkhanov Institute of Physics
Email: a.mollaev@mail.ru
Russian Federation, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003
A. Yu. Mollaev
Amirkhanov Institute of Physics
Author for correspondence.
Email: a.mollaev@mail.ru
Russian Federation, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003
L. A. Saipulaeva
Amirkhanov Institute of Physics
Email: a.mollaev@mail.ru
Russian Federation, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003
A. G. Alibekov
Amirkhanov Institute of Physics
Email: a.mollaev@mail.ru
Russian Federation, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, 367003
N. V. Melnikova
Institute of Natural Science
Email: a.mollaev@mail.ru
Russian Federation, ul. Kuibysheva 48, Yekaterinburg, 620083
Supplementary files
