Email this article Transport properties of graphene in the region of its interface with water surface
- Authors: Butko A.V.1, Butko V.Y.1,2, Lebedev S.P.1,3, Smirnov A.N.1, Davydov V.Y.1, Lebedev A.A.1, Kumzerov Y.A.1
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Affiliations:
- Ioffe Physical-Technical Institute
- St. Petersburg Academic University—Nanotechnology Research and Education Centre of the Russian Academy of Sciences
- National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 58, No 7 (2016)
- Pages: 1483-1486
- Section: Graphenes
- URL: https://ogarev-online.ru/1063-7834/article/view/198276
- DOI: https://doi.org/10.1134/S1063783416070106
- ID: 198276
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Abstract
The graphene growth by thermal decomposition of silicon carbide at the temperature of ~1400°C in a high vacuum of ~10–6 Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2–4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene–water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.
About the authors
A. V. Butko
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Yu. Butko
Ioffe Physical-Technical Institute; St. Petersburg Academic University—Nanotechnology Research and Education Centre of the Russian Academy of Sciences
Author for correspondence.
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021; ul. Khlopina 8/3, St. Petersburg, 194021
S. P. Lebedev
Ioffe Physical-Technical Institute; National Research University of Information Technologies, Mechanics, and Optics
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Kronverkskii pr. 49, St. Petersburg, 197101
A. N. Smirnov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Yu. Davydov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
A. A. Lebedev
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
Yu. A. Kumzerov
Ioffe Physical-Technical Institute
Email: vladimirybutko@gmail.com
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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