Improved core model of indentation and its application to measure diamond hardness


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Аннотация

A model of the indentation using conical and pyramidal indenters has been proposed, in which not only a sample but the indenter as well are elastoplastically deformed and their materials obey the Mises yield condition. These conditions are characteristic of the measuring of diamond hardness through a diamond indenter. The model that has been proposed generalizes and refines the known simplified Johnson’s model, which uses an elastically deformed indenter. The proposed model makes it possible to determine approximately the sizes of elastoplastic zones in the indenter and sample, the effective apex angle of the loaded indenter and effective angles of the indenter and imprint after unloading. Based on this model a procedure of the determination of the sample and indenter yield strengths (Ys and Yi, respectively) has been developed, in which the relations that use the experimental values of the effective angle of the sample imprint and measured values of the Meyer hardness, HM (mean contact pressure) are added to theoretical relations of the indentation model. The developed computational procedure was applied in indentation experiments on synthetic diamond at the temperature 900°C (at which diamond exhibits a noticeable plastic properties) using natural diamond pyramidal indenters having different apex angles. According to the proposed model, the stress-strain states of samples and indenters have been investigated and their yield strengths and plasticity characteristics were defined. The stress–strain curve of the diamond in the stress-total strain coordinates has been constructed. The strain hardening of diamond was also studied.

Авторлар туралы

B. Galanov

Frantsevich Institute for Materials Science Problems

Хат алмасуға жауапты Автор.
Email: gbaprofil@bk.ru
Украина, vul. Krzhizhanovs’kogo 3, Kiev, 03680

Yu. Milman

Frantsevich Institute for Materials Science Problems

Email: alona_suprun@mail.ru
Украина, vul. Krzhizhanovs’kogo 3, Kiev, 03680

S. Ivakhnenko

Bakul Institute for Superhard Materials

Email: alona_suprun@mail.ru
Украина, vul. Avtozavods’ka 2, Kiev, 04074

O. Suprun

Bakul Institute for Superhard Materials

Хат алмасуға жауапты Автор.
Email: alona_suprun@mail.ru
Украина, vul. Avtozavods’ka 2, Kiev, 04074

S. Chugunova

Frantsevich Institute for Materials Science Problems

Email: alona_suprun@mail.ru
Украина, vul. Krzhizhanovs’kogo 3, Kiev, 03680

A. Golubenko

Frantsevich Institute for Materials Science Problems

Email: alona_suprun@mail.ru
Украина, vul. Krzhizhanovs’kogo 3, Kiev, 03680

V. Tkach

Bakul Institute for Superhard Materials

Email: alona_suprun@mail.ru
Украина, vul. Avtozavods’ka 2, Kiev, 04074

P. Litvin

Lashkarev Institute of Physics of Semiconductors

Email: alona_suprun@mail.ru
Украина, pr. Nauky 45, Kiev, 03028

I. Voskoboinik

Frantsevich Institute for Materials Science Problems

Email: alona_suprun@mail.ru
Украина, vul. Krzhizhanovs’kogo 3, Kiev, 03680

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© Allerton Press, Inc., 2016