Low frequency properties of a silicon-based plasmonic detector

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The properties of a silicon-based plasmonic detector of electromagnetic radiation were examined in the lowfrequency region (0.1-20 GHz). The detector’s sensitive element was embedded within a matched coplanar waveguide, through which the electromagnetic radiation was conveyed. The dependence of the DC voltage observed at the detector’s output on the frequency of the incident radiation was measured. The detector’s power characteristics were measured, and the threshold radiation power at which the detector transitions into a nonlinear regime was determined.

作者简介

A. Shchepetilnikov

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Email: shchepetilnikov@issp.ac.ru
Chernogolovka, Russia

A. Khisameeva

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

Ya. Fedotova

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

A. Dremin

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

I. Kukushkin

Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences

Chernogolovka, Russia

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