Room temperature ferromagnetism of a crystalline semiconductor compound Hg 1 –  x  Fe  x  Se at extremely low concentration of impurity iron atoms ( x  ≤ 0.06 at %)

T. E. Govorkova; Говоркова Т. Е.; V. I. Okulov; Окулов В. И.; E. A. Pamyatnykh; Памятных Е. А.; V. S. Gaviko; Гавико В. С.; V. T. Surikov; Суриков В. Т.

doi:10.31857/S0367676523701454

Room temperature ferromagnetism of a crystalline semiconductor compound Hg_{1 – x}Fe_xSe at extremely low concentration of impurity iron atoms (x ≤ 0.06 at %)

Authors: Govorkova T.E.¹, Okulov V.I.¹, Pamyatnykh E.A.², Gaviko V.S.¹, Surikov V.T.³
Affiliations:
1. Mikheev lnstitute of Metal Physics of Ural Branch of Russian Academy of Sciences
2. Ural Federal University
3. Institute of Solid State Chemistry of Ural Branch of Russian Academy of Sciences
Issue: Vol 87, No 6 (2023)
Pages: 838-842
Section: Articles
URL: https://ogarev-online.ru/0367-6765/article/view/135406
DOI: https://doi.org/10.31857/S0367676523701454
EDN: https://elibrary.ru/VLRNKP
ID: 135406

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Abstract

On the single crystals of Hg_{1 –} _xFe_xSe (х ≤ 0.06 at %) with an extremely low concentration of the impurity iron atoms at room temperature (T = 300 K), high-temperature ferromagnetism of a new type in a impurity donor electron system was experimentally discovered.

About the authors

T. E. Govorkova

Mikheev lnstitute of Metal Physics of Ural Branch of Russian Academy of Sciences

Author for correspondence.
Email: govorkova@imp.uran.ru
Russia, 620108, Yekaterinburg

V. I. Okulov

Mikheev lnstitute of Metal Physics of Ural Branch of Russian Academy of Sciences

Email: govorkova@imp.uran.ru
Russia, 620108, Yekaterinburg

E. A. Pamyatnykh

Ural Federal University

Email: govorkova@imp.uran.ru
Russia, 620002, Yekaterinburg

V. S. Gaviko

Mikheev lnstitute of Metal Physics of Ural Branch of Russian Academy of Sciences

Email: govorkova@imp.uran.ru
Russia, 620108, Yekaterinburg

V. T. Surikov

Institute of Solid State Chemistry of Ural Branch of Russian Academy of Sciences

Email: govorkova@imp.uran.ru
Russia, 620108, Yekaterinburg

References

Dietl T., Ohno H. // Rev. Mod. Phys. 2014. V. 86. P. 187.
Wang H., Sun S., Lu J. et al. // Adv. Funct. Mater. 2020. V. 30. Art. No. 2002513.
Xue J., Yan H., Lui W. et al. // J. Supercond. Nov. Magn. 2021. V. 34. P. 7.
Yu. S., Zhao G., Peng Y. et al. // Crystals. 2020. V. 10. P. 690.
Kabir F., Murtaza A., Saeed A. et al. // J. Mater. Sci. Mater. Electron. 2021. V. 32. P. 10734.
Окулов В.И., Сабирзянова Л.Д., Курмаев Э.З. и др. // Письма в ЖЭТФ. 2005. Т. 81. С. 80; Okulov V.I., Sabirzyanova L.D., Kurmaev E.Z. et al. // JETP Lett. 2005. V. 81. P. 72.
Окулов В.И., Памятных Е.А., Силин В.П. // ФНТ. 2011. Т. 37. С. 1001; Okulov V.I., Pamyatnykh E.A., Silin V.P. // Low Temp. Phys. 2011. V. 37. P. 798.
Лончаков А.Т., Окулов В.И., Говоркова Т.Е. и др. // Письма в ЖЭТФ. 2012. Т. 96. № 6. С. 444; Lonchakov A.T., Okulov V.I., Govorkova T.E. et al. // JETP Lett. 2012. V. 96. No. 6. P. 405.
Окулов В.И., Говоркова Т.Е., Жевстовских И.В. и др. // ФНТ. 2013. Т.39. № 4. С. 493; Okulov V.I., Govorkova T.E., Zhevstovskikh et al. // Low Temp. Phys. 2013. V. 39. No. 4. P. 384.
Говоркова Т.Е., Лончаков А.Т., Окулов В.И. и др. // ФНТ. 2015. Т. 41. С. 202; Govorkova T.E., Lonchakov A.T., Okulov V.I. et al. // Low Temp. Phys. 2015. V. 41. No. 2. P. 154.
Говоркова Т.Е., Окулов В.И. // ФНТ. 2018. Т. 44. С. 1562; Govorkova T.E., Okulov V.I. // Low Temp. Phys. 2018. V. 44. No. 11. P. 1221.
Говоркова Т.Е., Окулов В.И., Окулова К.А. // ФНТ. 2019. Т. 45. С. 270; Govorkova T.E., Okulov V.I., Okulova K.A. // Low Temp. Phys. 2019. V. 45. P. 234.
Говоркова Т.Е., Окулов В.И. // ФТТ. 2022. Т. 64. С. 60; Govorkova T.E., Okulov V.I. // Phys. Solid State. 2022. V. 64. No. 1. P. 58.
Цидильковский И.М. // ФТП. 1990. Т. 24. С. 593.
Furdyna J.K., Kossut J. Diluted magnetic semiconductors. N.Y.: Academic Press, 1988.
Singh S., Singh P. // J. Phys. Chem. Solids. 1980. V. 41. P. 135.