INFLUENCE OF CHIRALITY ON SPIN TRANSPORT IN GaN (8, n2) NANOTUBES

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Abstract

The electronic structure of single-walled chiral GaN (8, n2) nanotubes, where n2 = 1–7, has been investigated using the nonempirical relativistic augmented cylindrical wave method. It is established that all systems are semiconductors with a band gap of 1–2 eV. The spin-orbit splitting amounts to 3–13 meV for the valence band top and 1–10 meV for the conduction band bottom. The highest spin selectivity efficiency is observed in (8, 1) and (8, 2) nanotubes, where dominant α-transport and high spin-orbit splitting (>10 meV) create optimal conditions for spin filters.

About the authors

V. B Merinov

National Research Nuclear University "MEPhI"; N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Email: Merinov.V.B@gmail.com
Moscow, Russia; Moscow, Russia

P. A Kulyamin

National Research Nuclear University "MEPhI"; N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Moscow, Russia; Moscow, Russia

P. N D'yachkov

N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences

Moscow, Russia

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