Optical and Electrical Properties of Graphene Oxide
- 作者: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.4
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- AkKo Lab LLC
- Ioffe Physicotechnical Institute, Russian Academy of Sciences
- Research and Development Center for Thin-Film Technologies in Energetics
- 期: 卷 125, 编号 6 (2018)
- 页面: 1014-1018
- 栏目: Optical Materials
- URL: https://ogarev-online.ru/0030-400X/article/view/165897
- DOI: https://doi.org/10.1134/S0030400X18120032
- ID: 165897
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详细
The Raman spectra and the temperature dependence of the electrical resistance of graphene oxide in the process of continuous heating and cooling in an argon atmosphere in the temperature range of 300–550 K are studied. The D and G bands in the Raman spectra are described, and their nature is determined. A decrease in the D-band intensity after thermal treatment is related to a decrease in the concentration of oxygen-containing groups. This leads to a decrease in electrical resistance with increasing temperature. It is found that the resistance is independent of temperature in the range of 300–370 K, which testifies to a thermal stability of graphene oxide resistance.
作者简介
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala
D. Kornilov
AkKo Lab LLC
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
S. Tkachev
AkKo Lab LLC
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
E. Terukov
Ioffe Physicotechnical Institute, Russian Academy of Sciences
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. S. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
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