Dispersion of the refractive index in high-k dielectrics


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A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.

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V. Shvets

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

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Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

V. Kruchinin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Gritsenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University

Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073

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