Dispersion of the refractive index in high-k dielectrics
- 作者: Shvets V.A.1,2, Kruchinin V.N.1, Gritsenko V.A.1,2,3
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- 期: 卷 123, 编号 5 (2017)
- 页面: 728-732
- 栏目: Condensed-Matter Spectroscopy
- URL: https://ogarev-online.ru/0030-400X/article/view/165565
- DOI: https://doi.org/10.1134/S0030400X17110194
- ID: 165565
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详细
A brief review of the optical properties of oxide materials that are used at present as dielectrics in modern microelectronics is presented. Using spectral ellipsometry, dispersion dependencies for different materials are measured. A brief comparative analysis of different dielectric coatings is carried out. The results of our research will be useful in further studies of the properties of dielectrics, as well as in technologies that are employed in the development of new semiconductor instruments and devices.
作者简介
V. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: shvets@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
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