Quantum memory on a charge qubit in an optical microresonator
- 作者: Tsukanov A.V.1,2
-
隶属关系:
- Institute of Physics and Technology
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 123, 编号 4 (2017)
- 页面: 602-609
- 栏目: Nonlinear and Quantum Optics
- URL: https://ogarev-online.ru/0030-400X/article/view/165546
- DOI: https://doi.org/10.1134/S0030400X17100241
- ID: 165546
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详细
A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.
作者简介
A. Tsukanov
Institute of Physics and Technology; Moscow Institute of Physics and Technology (State University)
编辑信件的主要联系方式.
Email: a-v-ts@mail.ru
俄罗斯联邦, Moscow, 117218; Dolgoprudnyi, Moscow oblast, 141700
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